PART |
Description |
Maker |
M25PE10 M25PE20 M25PE10-VMP6TG M25PE10-VMP6TP M25P |
4 Mbit Uniform Sector, Serial Flash Memory 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out 1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
M59DR008 M59DR008E M59DR008E100N1T M59DR008E100N6T |
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M45PE10-VMN6P M45PE10-VMN6TP M45PE10-VMP6TG |
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
M45PE80-VMP6G M45PE80-VMP6TG M45PE80-VMP6TP M45PE8 |
8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
M45PE40 M45PE40-VMN6G M45PE40-VMN6P M45PE40-VMN6TG |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
M45PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
M45PE80-VMP6P |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
M25PE40 M25PE40VMN6G M25PE40VMN6P M25PE40VMN6TG M2 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
M25PE80-VMP6T M25PE80-VMW6P M25PE80-VMP6P M25PE80- |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 COIL CHOKE 27MH .50A RADIAL 8兆位,低电压,页面与字节可擦除串行闪存更改性,50MHz的SPI总线,标准品 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
|
STMicroelectronics N.V. ST Microelectronics
|
M27W800-150K6TR M27W800 M27W800-100B6TR M27W800-10 |
8 Mbit (1Mb x 8 or 512Kb x 16), Low Voltage UV EPROM and OTP EPROM 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM 8兆8512KB × 16低压紫外线存储器和OTP存储 81兆812KB × 16低压紫外线存储器和OTP存储 8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|